http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11126763-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-86
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
filingDate 1998-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37c6eb365a197d70af8dbe5ad673868b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5276eebddb3ab34c443b37e3d57a8864
publicationDate 1999-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H11126763-A
titleOfInvention Semiconductor device separation method
abstract (57) [Summary] A scribe for device separation can be performed without releasing stress of a polished wafer, and a wafer is separated efficiently. First, a front side (a plurality of semiconductor devices 10 side) of a wafer 103 is bonded to an auxiliary plate 105 with a first wax 104, and the auxiliary plate 105 is bonded to a polishing jig 107 with a second wax 106. Then, the back side (sapphire substrate 101 side) of the wafer 103 is polished. next, Melting the wax 106 and polishing the auxiliary plate 105 to the polishing jig 10 In a state where the wafer 103 is removed from the wafer 7, the back surface of the wafer 103 is scribed according to a pattern to be separated. Next, after bonding the back surface of the wafer 103 to the adhesive sheet 108, the wax 104 is melted and the wafer 103 is removed from the auxiliary plate 105. Next, the adhesive sheet 108 is extended to separate the wafer 103 along the scribed line.
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priorityDate 1997-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 44.