http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11116396-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d107b35f2512d0630fdf32bb7ab5c994 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-09 |
filingDate | 1997-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c761a567e2f1a0d847df871422bab387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8434a2f2f534ecc1c7ec74702e3a3fb |
publicationDate | 1999-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H11116396-A |
titleOfInvention | Bismuth-substituted garnet material and method for producing the same |
abstract | (57) [Problem] To provide an optical bismuth-substituted garnet material for optical use having a small insertion loss, a large Faraday rotation capability, and a small required applied magnetic field, and a method for manufacturing the same. SOLUTION: Neodymium, gallium, garnet (N GG) on the substrate by liquid phase growth method, Tb 3-ab Gd a B In i b Fe 5-x Ga x O 12 becomes formula, a = 0.02 ~ 0.55, x = 0.02 ~ 0.60, b = 1.0 ~ 1.5 Bismuth-substituted garnet material for optics obtained by growing a garnet single crystal thick film containing Tb, Ga, Bi, Fe, and Ga as main components, and a method for producing the same. |
priorityDate | 1997-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.