| abstract |
(57) [Problem] To provide a semiconductor device with high productivity and high reliability and reproducibility by a simple manufacturing process. In a structure of a bottom-gate type semiconductor device formed of a semiconductor layer having a crystal structure, a source / drain region is formed of a first conductive layer (n + layer) and a second conductive layer having a higher resistance than the first conductive layer (n + layer). It has a layered structure including a layer (n − layer) and an intrinsic or substantially intrinsic semiconductor layer (i-layer). At this time, the n − layer functions as an LDD region, and the i layer functions as an offset region in the thickness direction. |