http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1092991-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-473 |
| filingDate | 1996-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d4e4e339f569ef2ee81de4b04eb66e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02ca0d7c92cabe39f2de30393b4d6ef9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea11e492e812498f1d3569daf95b4667 |
| publicationDate | 1998-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1092991-A |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | (57) [Summary] [PROBLEMS] To provide a structure of a new semiconductor element which handles a large amount of electric power and has a larger electric power and a smaller space. SOLUTION: A semiconductor element characterized in that a basic component of a semiconductor element such as a semiconductor or an insulating film is directly formed by using a pipe-shaped member or the like as a base, and a coolant is caused to flow through a pipe portion. Further, as a method of manufacturing the semiconductor element, a semiconductor element can be easily manufactured by placing the substrate in a material gas atmosphere and generating a layer containing the material by heating or gas discharge. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020004894-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7705448-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7304379-B2 |
| priorityDate | 1996-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.