http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1081598-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1996-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7e03fa03b254a35f1b43f4d2f491789 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1345b3ed22e1f7b8d91e7d62b07bf455 |
| publicationDate | 1998-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1081598-A |
| titleOfInvention | Method for producing 6H-SiC by laser ablation |
| abstract | (57) [Problem] To be used as an optical device element material such as a semiconductor laser, it is necessary that different polytypes do not coexist. In addition, all of the conventional manufacturing methods require a long time to grow a crystal. An instantaneous synthesis method has long been desired. SOLUTION: The present invention instantaneously generates a high temperature and a high pressure by condensing a strong pulsed laser beam on an interface between a silicon substrate and an organic solvent, and instantaneously generates 6H-SiC by irradiation of a single pulsed laser beam. A method for producing 6H-SiC by laser ablation, which comprises synthesizing a nanocrystal aggregate in a short crystal growth time. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100384892-B1 |
| priorityDate | 1996-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.