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filingDate 1996-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc22f80f2706e798b649a4815b4a1759
publicationDate 1998-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1081504-A
titleOfInvention Amorphous material
abstract PROBLEM TO BE SOLVED: To improve the disadvantages of an amorphous group III-V compound semiconductor, to have excellent photoconductive properties, high-speed response, little change over time, and environmental resistance and high temperature resistance. To provide an optically active and inexpensive amorphous material. SOLUTION: At least hydrogen and III in the periodic table An amorphous material containing a group III element, preferably gallium, and nitrogen, and an absorption peak (N-H) indicating a bond between nitrogen and hydrogen in an infrared absorption spectrum of the amorphous material. The absorbance ratio I NH / I CH at the absorption peak (C—H) indicating the bond between carbon and hydrogen is 2 or more; and Ratio of absorbance I NH / I in an infrared absorption spectrum between an absorption peak (N-H) indicating a bond between nitrogen and hydrogen and an absorption peak (III-H) indicating a bond between a group III element and hydrogen. III-H is 0.2 or more. It is preferable to use an organic metal compound containing a group III element as a raw material of a group III element and to use nitrogen gas as a raw material of nitrogen.
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priorityDate 1996-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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