http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1074947-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1996-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ea95cc3f2c6d573c31ce7572ad9bc5 |
| publicationDate | 1998-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1074947-A |
| titleOfInvention | Thin film transistor and method of manufacturing the same |
| abstract | (57) Abstract: A thin film transistor used for a liquid crystal display element, a sensor array, a RAM, and the like, and a method for manufacturing the same. The thin film transistor is low-cost, has excellent performance and reproducibility, and can be processed at a low temperature, and its manufacture. The aim is to provide a method. SOLUTION: After selectively forming polycrystalline silicon 3 on a substrate 1, when forming a gate insulating layer 6 on the polycrystalline silicon 3, a Cu thin film 4 is formed on the polycrystalline silicon 3 and further heat-treated. To form a metal silicide layer containing Cu, and oxidize using the metal silicide layer as a catalyst. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100542304-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2447909-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2447909-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100372081-C |
| priorityDate | 1996-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.