| abstract |
(57) [Summary] [PROBLEMS] In the manufacturing process of integrated circuits and semiconductors, titanium can be polished at a much higher speed than before without causing defects or damage to products, and a high polishing rate of tungsten and titanium nitride And provides a slurry for chemical and mechanical polishing that exhibits a low polishing rate for SiO 2 . An aqueous chemical / mechanical polishing slurry containing an oxidizing agent, an abrasive, and a fluoride-containing additive. Preferably, it contains about 0.01 to about 2.0% by weight of a fluoride-containing additive, wherein the fluoride-containing additive is selected from fluoride-containing acids, fluoride salts. Preferably, the fluoride containing additive is selected from hydrofluoric acid, fluorosilicic acid, fluorotitanic acid, wherein the fluoride containing acid is from about 0.01 to Present in an amount ranging from about 0.3% by weight, the fluoride salt is selected from ammonium fluoride, potassium fluoride, ammonium hydrogen difluoride, potassium hydrogen difluoride. |