| abstract |
(57) Abstract: An object of the present invention is to provide a highly reliable semiconductor device in which connection regions of external connection terminals such as bonding pads and the like can be arranged at high density, and a method of manufacturing the same. . SOLUTION: Electrodes of each layer (100, 200, 300) Embedded conductor layers (110a to 110d, 120a To 120d). No step is generated even if the multilayer structure is promoted. Further, openings (130a to 130i) are provided in the second layer electrode (200), and through the openings, the first interlayer insulating film (160) and the second interlayer insulating film (150) are formed. ) Is connected, whereby a pillar (140) made of an interlayer insulating film is interposed between the third-layer electrode (100) and the first-layer electrode (300). Therefore, even if a load is applied during wire bonding, cracks do not occur in the interlayer insulating films (150, 160). |