| abstract |
(57) Abstract: The present invention relates to a semiconductor manufacturing apparatus in which W is buried in a contact hole on a Si wafer. The most important feature is that the x film can be formed efficiently. For example, a Si wafer set in an L / UL chamber (11) is transferred through a transfer chamber (41) in a high vacuum state. Send to i chamber 21. Then, after heating the Si wafer to 300 ° C. or more by the heating mechanism 25, the gas line 2 Plasma CVD using Ar gas from Gas No. 2 as a carrier gas and TiCl 4 from gas line 23 as a source gas By law, Si and Ti by self-alignment, to form a TiSi x film on the bottom of the contact hole. After this, Ti The Si wafer Si x film is formed, without exposure to the atmosphere, sent to the W chamber 31 through the transfer chamber 41 has a configuration continuously performing deposition of the W film by selective CVD method. |