| abstract |
PROBLEM TO BE SOLVED: To provide an oxide antiferromagnetic layer showing practically sufficient reliability and to show a large MR change rate, and to be linear in an extremely small range of applied magnetic field of, for example, about -10 to 10 Oe. Provided are a magnetic multilayer film exhibiting high MR change rising characteristics, high magnetic field sensitivity, and a large MR gradient in a high-frequency magnetic field, and a magnetoresistive element using the same, and a magnetic transducer such as a magnetoresistive head. . An oxide antiferromagnetic layer, a pinned ferromagnetic layer pinned by the oxide antiferromagnetic layer, a nonmagnetic metal layer, and a free ferromagnetic layer are sequentially stacked on a substrate. A magnetic multilayer film, or a magnetoresistive effect element using the same, or a magnetic transducer using the same, wherein the oxide antiferromagnetic layer has a surface roughness Ra of 0.6 nm on the pinned ferromagnetic layer side. Hereinafter, it is configured such that the crystal grain size D of the oxide antiferromagnetic layer is 10 to 40 nm. |