| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
1996-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db5c5c147164197d7bb8e0d21aefc400
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08e73c0c15d828110b586c741e0009c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_403629673cb8aa655ccba5f3fc211bdf |
| publicationDate |
1998-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H104069-A |
| titleOfInvention |
Manufacturing method of semiconductor fine structure |
| abstract |
(57) [Summary] [PROBLEMS] To enable a fine structure exhibiting a quantum effect to be accurately manufactured in a state of uniform size. A probe is brought close to a surface of a GaN film on a GaAs substrate to a distance of about 1 nm. And By switching the switch 13, the probe 11 and the GaAs The current between the substrates 1 is increased to partially etch the GaN film 4a in units of one molecule. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007318164-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007173751-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008522848-A |
| priorityDate |
1996-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |