| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate |
1998-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c2a67fb99e7382117013c02604c37c |
| publicationDate |
1998-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10341024-A |
| titleOfInvention |
Thin film semiconductor device |
| abstract |
(57) [Summary] [Object] To provide a semiconductor device in which thin film transistors having different characteristics are formed on the same substrate. In the step of forming a thin film transistor (TFT) on an insulating substrate, after forming an amorphous semiconductor film, selectively irradiating a laser beam under a different first condition, and then applying a laser beam under a second condition to the substrate. By irradiating the entire surface or a part thereof to change the crystallinity of the thin film transistor, thin film transistors having different characteristics are formed on one substrate to obtain a thin film semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9097953-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4731655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000299470-A |
| priorityDate |
1998-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |