http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10335289-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1997-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f18c98ae5b47ffce773fc052f63ad82 |
| publicationDate | 1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10335289-A |
| titleOfInvention | Processing method of silicon semiconductor substrate |
| abstract | (57) [Problem] To provide a method for processing a silicon semiconductor substrate in which formation of a natural oxide film is suppressed. The method for treating a silicon semiconductor substrate includes the step of applying a mixed agent containing at least (tri) deuterium fluoride or a mixed agent containing at least both of deuterium fluoride (tri) and hydrogen fluoride to a silicon semiconductor substrate. The silicon semiconductor substrate is subjected to a deuterium termination treatment of silicon atoms. The mixed drug can be an aqueous solution in which at least (tri) fluoride is dissolved, or an aqueous solution in which at least both (tri) deuterium fluoride and hydrogen fluoride are dissolved, can be used in the form of (tri) deuterium fluoride or fluorinated ( 3) A mixed gas containing at least both deuterium and hydrogen fluoride may be used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7179746-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8183670-B2 |
| priorityDate | 1997-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.