http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10333341-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
filingDate 1997-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a314ce10e6ebfe39c33a3b695f1be2d
publicationDate 1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10333341-A
titleOfInvention Method of forming resist pattern and method of manufacturing semiconductor device
abstract (57) Abstract: In a photolithography technique using a chemically amplified resist, a resist pattern forming method for forming a pattern below the resolution limit of an exposure apparatus and a method for manufacturing a semiconductor device are provided. An acid generator that generates an acid by light irradiation, A step of applying a photoresist having a unit structure in which a protecting group is dissociated by an acid to form a photoresist film (Steps S11 to S12), and a step of processing the photoresist film into a predetermined pattern (Steps S13 to S16) Exposing the photoresist film to generate an acid in the photoresist film (step S17); dissociating the protective group with the acid, and reacting the unit structure with the dissociated protective group with a predetermined fluid. To change the dimensions of the patterned photoresist film (step S18) Thus, a resist pattern is formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101207046-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009212404-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6210868-B1
priorityDate 1997-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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