http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10326932-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_930d026de3a6f8109fa00a85852fe8e4 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1997-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cb1408e24ad7b65a99e6b1836fb5a0b |
| publicationDate | 1998-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10326932-A |
| titleOfInvention | Distributed feedback semiconductor laser |
| abstract | (57) [Problem] To provide a distributed feedback semiconductor laser capable of reducing a threshold current value of laser oscillation. A first cladding layer (13) is provided on a substrate (12). , An active layer 14, a second cladding layer 15, a contact layer 16, a current stop layer 17 having a stripe groove 19 forming a current path, and an electrode layer 18. A semiconductor laser in which a plurality of recesses 20 are arranged at regular intervals over the layer 15 in a stripe groove direction. 2 were provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001284712-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/NL-1015763-C2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4599836-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005183821-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002305350-A |
| priorityDate | 1997-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.