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filingDate 1997-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65a2ad9309a321906560d38207599a25
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publicationDate 1998-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10324820-A
titleOfInvention Method for producing In2O3-SnO2-based thin film
abstract PROBLEM TO BE SOLVED: To provide In 2 O 3 -S having excellent characteristics of low resistance value. Provided is a method for producing an nO 2 -based thin film. SOLUTION: When preparing a sol by hydrolyzing a solution containing indium alkoxide and tin alkoxide, divalent tin alkoxide is used instead of tetravalent tin alkoxide. The obtained sol is applied to the surface of a substrate to form a gel film, and then the gel film is crystallized to form In 2 O 3 —S The nO 2 -based thin film exhibits conductivity.
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