http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10308373-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1995-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3500480ed1f5d6a64c715893359f30dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3afd284037fa4573359bb293598f2911 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_371c4015cb0c67b0eef969e4ed9bc3b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62d4074cf8f22271bd5da6eb9961f136 |
| publicationDate | 1998-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10308373-A |
| titleOfInvention | Silicon wafer and cleaning method thereof |
| abstract | (57) [Problem] To provide a silicon wafer with a natural oxide film having a reduced surface boron concentration. Eliminate adverse effects in the device process. A silicon wafer with a natural oxide film with a reduced boron concentration is manufactured. SOLUTION: After cleaning a silicon wafer with a diluted hydrofluoric acid solution, it is immersed in pure water containing 3 to 10 ppm of ozone. Preferably, it is immersed in 8 ppm ozone water (using O2 obtained by electrolyzing ultrapure water as a raw material) for 15 seconds. As a result, a silicon wafer in which a natural oxide film having a thickness of 5 to 7 ° is formed on the surface and the boron concentration in the natural oxide film is controlled to 10 10 / cm 2 or less is obtained. By reducing the boron concentration, the adverse effects in the device process are greatly reduced. At the same time, metal contamination on the wafer surface can be reduced. Al, Fe, The concentration of Cu or the like can be reduced to less than 10 9 / cm 2 . In addition, good bonding can be performed. The on-resistance of the VDMOS can be reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0123649-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007042889-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9163327-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000315634-A |
| priorityDate | 1995-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.