| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 |
| filingDate |
1997-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14b70b55334cde5f87c777c9aff2feab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b3017f7fe39eadd0c0d64b249e2f1a |
| publicationDate |
1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10303414-A |
| titleOfInvention |
Insulated gate semiconductor device and acceleration sensor using the same |
| abstract |
[PROBLEMS] To increase the speed and reduce the switching loss of an insulated gate semiconductor device. An insulated gate transistor in which a gate electrode is provided with a space of 260 nm above a gate oxide film is sealed in a can type case. Reduce the pressure to the following high vacuum and seal. A silicon oxide film, By providing a gate insulating semiconductor device having a gate insulating film in which a relative dielectric constant and a low dielectric constant region smaller than a silicon oxide film are connected in series, capacitance due to the gate insulating film is reduced, and Obtain good interface properties. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6720634-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100617051-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6858458-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03058258-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006100819-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008270641-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012053050-A |
| priorityDate |
1997-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |