http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10303293-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32ec7eeb6f2e1f1064219f012adcc423 |
| publicationDate | 1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10303293-A |
| titleOfInvention | Method for forming wiring of semiconductor device |
| abstract | (57) [Summary] [Problem] A short circuit between wirings due to residue on an interlayer insulating film. Due to the occurrence of voids due to electromigration of aluminum at the interface of the tungsten plug, poor filling of the connection holes, etc., the device yield and reliability have been reduced. SOLUTION: Lower wiring 1 formed on a base insulating film 11 A substrate 10 is prepared in which a connection hole 16 reaching the lower layer wiring 12 is formed in an interlayer insulating film 13 covering 2, and a first conductor film 17 is formed on the inner wall of the connection hole 16 and on the interlayer insulating film 13. Next, the second conductor film 18 is formed on the first conductor film 17 so as to bury the inside of the connection hole 16 which is not buried. After the formation of the second conductive film 1, the remaining second conductive film 18 is left so as to fill the concave portion on the first conductive film 17. 8, the first conductor film 17 is flattened, the first conductor film 18 is further processed, and the lower wiring 1 from the connection hole 16 is formed. 2 is formed. |
| priorityDate | 1997-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.