http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10302546-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-10
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filingDate 1997-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95014764715f7ec05c72a2626fce62ad
publicationDate 1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10302546-A
titleOfInvention Dielectric thin film and thin film capacitor
abstract [PROBLEMS] To provide a dielectric thin film and a thin film capacitor which exhibit a large relative dielectric constant even under application of a DC bias, have a small rate of change in capacitance with temperature, and have a large relative dielectric constant even in a high-frequency region. . Kind Code: A1 A dielectric thin film having a thickness of 2 μm or less, wherein a composition formula based on a molar ratio of a metal element oxide is represented by (1-x) Pb when expressed as a (Mg b / 3 Nb 2/3 ) O 3 · xPb a SnO 3, x, a and b, 0 <x ≦ 0.10,1 ≦ a ≦ 1.10 and 1 ≦ b ≦ 1.15 are satisfied. Here, it is desirable that the shape of the crystal particles is a disk shape and the average particle size of the disk-shaped crystal particles is 0.6 μm or more.
priorityDate 1997-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.