| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-13 |
| filingDate |
1997-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0157871a56089ea0023597c2c943783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6019ed142d37f2bf96269241917c5bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_455700f74e047ce6f27367dcc063876e |
| publicationDate |
1998-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10289968-A |
| titleOfInvention |
Power semiconductor device |
| abstract |
(57) Abstract: In an insulating module type power semiconductor device, the stress generated in an aluminum nitride ceramic substrate is reduced. A small pattern that is not electrically connected is formed in a vacant area on the front side of an aluminum nitride ceramic substrate. [Effect] Since the stress is balanced with the back surface, stress generation can be reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7671467-B2 |
| priorityDate |
1997-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |