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filingDate 1998-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e7a6d6806784e2f36ef855d2dd76039
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publicationDate 1998-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10289949-A
titleOfInvention Interconnect using metal spacers and method of forming same
abstract (57) [Summary] To increase the conductivity between interconnect lines between levels. In a preferred embodiment, sidewall spacers are used on the sides of the interconnect lines to increase the contact area between the interconnect lines and the interconnect studs. This increase in the contact area improves the connection resistance and achieves miniaturization of the device without reducing the conductivity of the connection and without significantly increasing the cost of the manufacturing process.
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