http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10284540-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
filingDate 1997-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60df2bdbe95997d5a6961c5952fd207c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f36a0cf9a71f30c5493deb32d6bded6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b344ebda833f35c456ad3dc1709a6f51
publicationDate 1998-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10284540-A
titleOfInvention Support substrate, manufacturing method of support substrate, electronic component device, and surface treatment method of support substrate
abstract (57) [Summary] [Object] To improve the reflow crack resistance due to a bonding material by increasing the adhesive force between an electronic component and a supporting substrate. A support substrate (lead frame, insulating substrate, etc.) on which electronic components (semiconductor chips, transistors, etc.) are mounted is placed in a solution containing 0.001 to 10% by weight of urea or a derivative thereof for 0.5 seconds to 10 seconds. Soak for a minute, remove it and dry while heating. A semiconductor chip is bonded to the obtained surface-treated support substrate using an organic bonding material (such as a silver paste or a film-like adhesive containing a silver filler). As the urea derivative, γ-carbamylpropyltriethoxysilane, dimethylurea formamide and the like can be used.
priorityDate 1997-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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