| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1998-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc92a4283591cee10b5219c1f5cc36a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff41789295893d1a48147084b7355ca3 |
| publicationDate |
1998-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10284440-A |
| titleOfInvention |
Semiconductor device forming method |
| abstract |
[PROBLEMS] To use an organic precursor which is relatively compatible with an ideal resistance value and can form a good diaphragm quality at a low wafer temperature when depositing a diffusion diaphragm. , TaN or T Provides a method for depositing aSiN. A refractory metal nitride and a refractory metal silicon nitride film can be formed using metal organic chemical vapor deposition. Tantalum nitride (TaN) can be formed by chemical vapor deposition (CVD) using ethyltrix (diethylamide) tantalum (ETDET) and ammonia. By containing silane, silicon tantalum nitride (TaSi N) layers can also be formed. These layers can be formed at wafer temperatures of about 400 ° C. or less so that the carbon content in the film is relatively low. Therefore, this embodiment It can be used to form tantalum nitride or silicon tantalum nitride, which is relatively conformable and has very dependent diffusion barrier quality. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013098519-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007113103-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007049612-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7960278-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000208743-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000208745-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010226132-A |
| priorityDate |
1997-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |