http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10276059-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-25
filingDate 1997-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_360948be586a71382043377f8469fd6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6b2fe305d72f1f81f5707fde9a0db7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71f2cda3fdf923a33b4fbee4c6627c6a
publicationDate 1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10276059-A
titleOfInvention Surface acoustic wave device
abstract PROBLEM TO BE SOLVED: To provide an IC having a desired resonance frequency using an inexpensive single-crystal Si substrate without requiring fine processing of a comb-shaped electrode. Provided is a high-frequency compatible broadband surface acoustic wave device that can be built-in. SOLUTION: A surface acoustic wave device in which a piezoelectric thin film is formed on a single crystal Si substrate via a buffer layer, and a comb-shaped electrode made of a conductive film is formed on the piezoelectric thin film. The piezoelectric thin film is made of a lead titanate thin film having a thickness of 0.03 to 5 μm formed by a sol-gel method, and a buffer layer is formed, if necessary, of a thickness of 0.01 to 0.2 μm by a sol-gel method. A surface acoustic wave device which is a thin film of barium strontium titanate, strontium titanate or barium titanate having a thickness of μm, and which is made of a piezoelectric thin film which is polarized by applying an electric field between comb electrodes.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236859-B2
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priorityDate 1997-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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