http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10275789-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
filingDate 1997-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10d7da945fdf9f9478fa03b25bec2341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0753218c46835e9b576fdafda491dba6
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publicationDate 1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10275789-A
titleOfInvention Abrasive and polishing method
abstract (57) Abstract: A polishing agent for polishing a metal film coated on a silicon wafer by chemical mechanical polishing, which has a polishing rate required for actual semiconductor device manufacturing. And a polishing method that can improve productivity in semiconductor manufacturing such as a reduction in product yield, and a polishing method using the polishing agent. An abrasive for polishing a metal film coated on a silicon wafer by chemical mechanical polishing, A polishing agent containing a complexing agent that reacts with a metal to form a water-soluble metal complex, and a polishing method for polishing a metal film coated on a silicon wafer by chemical mechanical polishing, wherein the polishing is performed as the polishing agent. Polishing method using an agent.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6676484-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008155368-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006319353-A
priorityDate 1997-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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