http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10270787-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1997-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9efbede7c8f653e6e6ccd81c0eae7d7 |
| publicationDate | 1998-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10270787-A |
| titleOfInvention | Multiple quantum well structure optical semiconductor device and method of manufacturing the same |
| abstract | (57) [Problem] To provide an optical semiconductor device capable of improving crystallinity and realizing uniform injection of hole carriers even in a large strain amount in a strain compensation MQW. SOLUTION: n-InGaAsP is formed on an n-type InP substrate. In an active layer for a semiconductor laser having a guide layer, a strained MQW layer, and an InGaAsP guide layer, a compressive strain InAs y P 1-y Insert the free strain of the thin film In 1-x Ga x As y P 1-y intermediate layer 8 between the well layer 6 and the tensile strain In 1-x Ga x AsP barrier layer 7, the well layer 6 The composition y of the intermediate layer 8 is made equal, and the composition x of the barrier layer 7 and the intermediate layer 8 are made equal. This simplifies interface switching during MO-VPE growth and improves crystallinity. Also, equalize the light hole band ends of the compressive strain well and the tensile strain barrier, The light hole level in the strained MQW layer is made single so that the light hole behaves like a bulk. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011192833-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006196880-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013183888-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4579526-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007194561-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007073584-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005136371-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008205270-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012089884-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018078290-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001094219-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406838-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005142456-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008506257-A |
| priorityDate | 1997-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.