http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10270325-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
filingDate 1997-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04a0fcc0f2a1121144d23ce631334039
publicationDate 1998-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10270325-A
titleOfInvention Exposure light source, exposure method, exposure apparatus, and method of manufacturing semiconductor device
abstract (57) [Problem] To provide an exposure light source capable of stably generating a narrow band laser beam having a sufficiently high average output in a vacuum ultraviolet region for a long time. SOLUTION: A laser beam L1 extracted from a XeCl excimer laser 101 strikes a beam splitter 105a, and about 30% of its power is supplied to a dye laser oscillator 1. The laser light L3 having a wavelength of 416 nm oscillates as the excitation light source 02. In the dye laser oscillator 102, an etalon 110, which is a band narrowing element, is used, and the band of the laser beam L3 is narrowed. The laser light L3 is transmitted through the beam splitter 105a, is amplified by the dye laser amplifier 103 that performs an amplification operation with the laser light L4 having a power of about 70%, which is incident via the mirror 111, and is amplified in the wavelength converter 104. The light is focused in the nonlinear optical crystal 112. Thereby, the laser light L having a wavelength of 208 nm, which is the second harmonic, is obtained. 6 is generated and used as exposure light L7.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002151390-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002151392-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001060550-A
priorityDate 1997-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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