http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10256276-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 |
| filingDate | 1997-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74fee61d5ea6ca201c9990716bd69ebe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96439b877750c503d403536adb49fc2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1390bf38ff9466f5eb408e4755317e76 |
| publicationDate | 1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10256276-A |
| titleOfInvention | Method for forming p-type II-VI compound semiconductor |
| abstract | PROBLEM TO BE SOLVED: To provide a p-type II metal-organic chemical vapor deposition (MOCVD) method which can easily achieve a p-type carrier concentration of 1 × 10 17 cm −3 or more in a II-VI compound semiconductor. -A method for forming a group VI compound semiconductor was developed, and the p-type carrier concentration was 1 × 1 A p-type II-VI group compound semiconductor of 0 17 cm -3 or more, particularly a p-type ZnSe-based semiconductor is obtained. A method for forming a p-type II-VI compound semiconductor by metal organic chemical vapor deposition (MOCVD) comprises: Bis [bis (trimethylsilyl) amide] zinc (Zn [N (SiMe 3 ) 2 ] 2 ) is used as a p-type dopant, and ditertiary butyl selenium (((CH 3 ) 3 C) 2 Se is used as a raw material of a group VI element. ), Tertiary butyl isopropyl selenium (((CH 3 ) 3 C) ((CH 3 ) 2 CH) Se) or diisopropyl selenium (((CH 3 ) using at least one of 2 CH) 2 Se) The growth temperature of the thin film is 200 ° C. or more and less than 340 ° C. |
| priorityDate | 1997-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.