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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
filingDate 1996-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0bb16b00bce483b202389d10e84ec55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_551041760008604697cd6230e29cac95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a363a4d8d93e307039a8609af176db25
publicationDate 1998-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H1025565-A
titleOfInvention Method for producing hard thin film and hard thin film
abstract [PROBLEMS] To provide a method for producing a hard thin film which can be used as a hard material and a super-hard material and which has a high hardness at a high speed and at a low cost, and a hard thin film having a high hardness. A method of manufacturing a hard thin film according to the present invention is a method of manufacturing a hard thin film by an arc ion plating method using a cathode having a carbon source containing at least carbon and a base material. A negative bias voltage is applied to the base material to bring the base material to a negative potential, and 0.1 μm of the carbon evaporating from the carbon source between the cathode and the base material. A protection body is provided to prevent the molten carbon particles having the above particle diameter from depositing on the base material. A hard thin film having a large hardness can be manufactured by this manufacturing method, This hard thin film is excellent as a hard material and a super hard material.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6881475-B2
priorityDate 1996-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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