http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10254136-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1997-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e8c6788d846774f20e5ac920e2e11e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf92c6162f276a54a5782dd87f205c1 |
| publicationDate | 1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10254136-A |
| titleOfInvention | Positive photoresist composition for deep ultraviolet exposure |
| abstract | (57) [Summary] [PROBLEMS] To have a low absorbance with respect to far ultraviolet light, especially an ArF excimer laser light source, and thus to have high sensitivity. Accordingly, an object of the present invention is to develop a photoresist composition having excellent focus tolerance, resolution, and pattern profile. SOLUTION: A polymer in which a halogen atom is substituted and a monomer containing an acid-decomposable group having a specific structure having a tertiary carbon is one of the repeating units, and a compound which generates an acid upon irradiation with actinic rays or radiation A positive photoresist composition for deep-ultraviolet light exposure, comprising: |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012255161-A |
| priorityDate | 1997-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 251.