http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10251090-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_74973199515dbabd2310245aab03e282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 |
| filingDate | 1997-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29a24831f06ec7e8be84fb89e25e2281 |
| publicationDate | 1998-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10251090-A |
| titleOfInvention | Oxide single crystal and method for growing the same |
| abstract | PROBLEM TO BE SOLVED: To provide an oxide single crystal which stably controls melt convection and has good crystallinity for an oxide having a light absorption peak in an infrared region, and a method for growing the same. SOLUTION: When growing an oxide single crystal having an optical absorption peak in an infrared region by a rotational pulling method using high-frequency induction heating, an afterheater divided along the pulling direction or an afterheater having an openable and closable slit. An oxide single crystal grown by placing it above a crucible and a method for growing the same. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007077013-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100756319-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8328932-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008157313-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7868708-B2 |
| priorityDate | 1997-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.