abstract |
(57) [Problem] To reduce the relative permittivity of an insulating film in manufacturing a semiconductor device. SOLUTION: An aluminum wiring 2 is arranged on a silicon substrate 1, and a plasma oxide film 3 is deposited. Thereafter, the HMO film 4 is deposited by a plasma CVD method using a mixed gas of silane, methylsilane and hydrogen peroxide or a mixed gas of methylsilane and hydrogen peroxide. The HMO film 4 A plasma oxide film 5 is formed thereon. |