http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10214808-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-10 |
| filingDate | 1997-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6b53c47200b827d6e5b29d55d4e70b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cd19963303720d983c66c36402f1e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_089bc66918c1a60a9ac390ddcbaf520d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ec56380109a9c36703324b97bada4e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95140663037e19701eae26904751e23b |
| publicationDate | 1998-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10214808-A |
| titleOfInvention | Polishing method for semiconductor substrate |
| abstract | PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor substrate used in a process of manufacturing a semiconductor chip, stabilize a polishing rate during polishing and realize selective polishing, and perform CMP of an interlayer insulating film. Thus, it is possible to realize stable end point management with time and end point management using a hard-to-polish layer as a stopper based on selective polishing. SOLUTION: The rotational torque value of a carrier holding a semiconductor substrate and / or its motor current consumption value is monitored. Then, polishing is performed while controlling the rotation speed of the carrier so that the value falls within a range of 50% or less (1.5 times the minimum value) from the minimum value. Polishing utilizing the characteristic that the temperature rise during polishing is suppressed and the fluctuation of the polishing rate is reduced, and in a system where a generated layer in which the polishing rate sharply decreases during polishing is formed, this generated layer is stably present. Method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007152499-A |
| priorityDate | 1997-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.