http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10209435-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate | 1997-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77be0a02b73a96375e5ebc0b9d42d2be |
| publicationDate | 1998-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10209435-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) Abstract: Provided is a semiconductor device capable of forming a side-etched portion with good reproducibility in an opening of a gate electrode and obtaining a gate electrode having high mechanical strength, and a method of manufacturing the same. The semiconductor device has an opening for burying a gate electrode, the opening has a multilayer structure of a SiO 2 layer and a SiN layer, and the SiO 2 layer is selectively etched in a substantially horizontal direction. Side etching part 1 formed 4 and the gate electrode 1 0 has entered. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7470967-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006190991-A |
| priorityDate | 1997-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.