http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10199881-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c5f90016f9502374bf424047d20e33 |
| publicationDate | 1998-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10199881-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) Abstract: In a semiconductor device using copper (Cu) as a wiring layer, Cu is formed by forming an insulating film covering a Cu wiring. Is oxidized to increase the resistance, and Cu is diffused into the insulating film, and the insulating effect is reduced, so that leakage is likely to occur. A first insulating film is formed on a semiconductor substrate. a, and a metal wiring (106a, 107a, 106b) whose main conductive layer is formed of a single layer or a plurality of conductive films of Cu or Cu alloy is formed on the first insulating film, This wiring is covered with the second insulating film 108a. Then, by introducing impurities such as P, B, As, Pb, and N into the second insulating film, the region of the wiring where Cu is exposed can be brought into contact with the insulating pus having a high ability to prevent Cu diffusion. Can prevent the oxidation of Cu, prevent the diffusion of Cu, and improve the electromigration resistance and stress migration resistance of Cu. A third insulating film 110a is formed thereon. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013004961-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6504234-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003017437-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6911405-B2 |
| priorityDate | 1997-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.