http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10197513-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2175de8bcadd3c1447a15ba8b57051c6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S134-902 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25375 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-24 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-2813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N23-225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-00 |
| filingDate | 1997-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd8c868fe1f98b868f427511da072760 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0edd3a44fdeaf7762539df4affda5e4c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8bfac93dbd145075c77469f50ee4cb5 |
| publicationDate | 1998-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10197513-A |
| titleOfInvention | Aluminum solvent composition for analyzing aluminum film on wafer for manufacturing semiconductor device and method for analyzing aluminum film using the same |
| abstract | (57) Abstract: Provided is an aluminum solvent composition for analyzing an aluminum film on a wafer for manufacturing a semiconductor device, and an aluminum film analysis method using the same. SOLUTION: The aluminum solvent composition is obtained by mixing phosphoric acid and deionized water. Also, the aluminum film analysis method includes a protective film forming step of forming a protective film on a wafer on which an aluminum film is formed, an aluminum film depositing step of depositing an aluminum film on a protective film of the wafer, and an aluminum film being deposited in the aluminum film depositing step. Immerse the formed wafer in a heated aluminum solvent composition, Until the color of the surface of the wafer changes, a dissolving step of dissolving the aluminum film, taking out the wafer from which the aluminum film has been dissolved and removed, a rinsing step of rinsing with water, a rinsing step of removing water remaining on the wafer surface after rinsing, and And analyzing the composition and distribution of the crystallized substance by magnifying the surface of the dried wafer. |
| priorityDate | 1996-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.