http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10189498-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
filingDate 1997-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bd808fc079d2f74732e1b30f728d11a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6030b5a0c7ea057733dff3f5f640f9b2
publicationDate 1998-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10189498-A
titleOfInvention Method for manufacturing group 3-5 compound semiconductor chip
abstract (57) Abstract: Provided is a method for manufacturing a Group 3-5 compound semiconductor chip that can suppress the occurrence of damage to a semiconductor crystal in a substrate dividing step and improve the yield. Kind Code: A1 Abstract: A general formula In formed on a sapphire substrate. x Ga y Al z N (x + y + z = 1,0 ≦ x ≦ 1,0 ≦ y ≦ 1, 0 ≦ z ≦ 1) In a method of manufacturing a semiconductor chip by dividing an epitaxial substrate having a stacked structure of a nitride-based group III-V compound semiconductor represented by the following formula: A method for manufacturing a Group 3-5 compound semiconductor chip, comprising: a step of removing a part of a semiconductor to form a split groove exposing a sapphire substrate and scribing the split groove.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009164289-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003031844-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011082432-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002151740-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009038407-A
priorityDate 1996-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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