| abstract |
PROBLEM TO BE SOLVED: To provide a composition for an antireflection film material, which has a large light absorbance, a good resolving power, a good dependency on film thickness and an excellent resist pattern, and has a high dry etching rate, and a resist using the same. Pattern formation method. SOLUTION: The composition for an antireflection film material containing a polymer compound having a group having a specific structure having a naphthalene ring, and a method of forming a resist pattern using the same. |