http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10172915-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
filingDate 1996-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_befd9f963cd01aea7e76250e372b790e
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publicationDate 1998-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10172915-A
titleOfInvention Wafer heat treatment equipment
abstract (57) [Summary] [Problem] To maintain high thermal insulation properties while suppressing the increase in size of the device and the generation of particles while maintaining the uniform temperature. Providing a single wafer processing system that improves processing efficiency. SOLUTION: A heat treatment surface side of a wafer 10 held by a wafer holding portion 22A is formed in a flat flat dome shape, and an outer container 12A made of quartz glass which forms a heat treatment space of the wafer 10 is provided. A heat insulator 20 is provided around an opening at the base of the base 12A, and the inner container 16 has a plurality of openings 16Aa facing the wafer by covering the wafer 10 inside the outer container 12A. A to form a reaction vessel 11A, It is characterized in that the reaction gas on the inner surface of 2A is introduced into the wafer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006505947-A
priorityDate 1996-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.