http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10163449-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6732dac10b778324c36891ec383c7e12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 1996-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45bcd530be95120ad2bcda1fc417f0a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e778f185c25a7773146122218b0ffbfa |
| publicationDate | 1998-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10163449-A |
| titleOfInvention | Manufacturing method of DRAM having case type capacitor having wrinkles on both sides |
| abstract | (57) [Problem] To provide a stacked capacitor having a high capacitance value and a stacked DRAM having a high integration density. SOLUTION: During the process, after forming the two concave grooves by etching the alternating multilayer structure on both sides of the memory cell contact, wrinkles are formed on the inner surface of the concave groove, and the third dielectric layer is etched to form the first dielectric layer. The polysilicon is locally exposed, a second polysilicon is formed, the second polysilicon is filled with the above-mentioned concave groove, and the second polysilicon is etched back, so that the second polysilicon is formed above the alternate multilayer structure. The second polysilicon stud is removed to form a second polysilicon stud in the above-mentioned concave groove, and the above-mentioned alternate multilayer structure, the third dielectric layer and the first polysilicon in the capacitor region are etched, and wrinkles are formed on the surface. And the remaining third dielectric layer was removed to expose the second polysilicon stud and the first polysilicon, thereby forming a lower electrode of the capacitor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007227944-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100346450-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109906500-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010078014-A |
| priorityDate | 1996-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.