| abstract |
(57) [Abstract] [Purpose] Even if a silicon growth layer serving as a seat for a storage node contact or a bit line contact is formed so as to ride on a gate electrode, the silicon growth layers may be short-circuited on element isolation insulation. Not to be. A trench-type element isolation insulating film is formed on a silicon substrate having a (100) main surface, a gate electrode with a gate-on insulating film is formed, and a gate sidewall insulating film is formed. The first silicon growth layer 109 is formed under the condition of growing only on the (100) plane, and the second silicon growth layer 110 is formed under the isotropic growth condition. A first interlayer insulating film 112 is formed, and a storage node contact 113 is opened. After that, a storage electrode, a capacitor insulating film, and a plate electrode are formed. Further, a second interlayer insulating film is formed, a bit line contact is opened, and a bit line is formed. |