| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab5c0479ce5d22586a898db76bf33bb9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G11-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J35-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B3-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-10 |
| filingDate |
1996-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13367ef7b29ee861c383d749bbf4f515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf51c2d87e09825560b37cee314903e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cee6cfa46462381550226c38cb4e31b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dddbe24cee2ac01b330a3af96cf128b |
| publicationDate |
1998-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10149985-A |
| titleOfInvention |
Production of semiconductor fine particles |
| abstract |
PROBLEM TO BE SOLVED: To provide a novel method and apparatus for producing semiconductor fine particles which can be used as a photosensitized semiconductor photocatalyst having high energy conversion efficiency. SOLUTION: A method for producing semiconductor fine particles, comprising the following steps (1) to (4), and an apparatus for producing semiconductor fine particles using the same. (1) A solid material as a raw material is irradiated with light in a vacuum atmosphere to form a plasma composed of atoms forming the material and excited chemical species to which the atoms are combined, and (2) a plasma is formed in the plasma. The plasma is cooled, recombined and agglomerated to form semiconductor microclusters by rapidly ejecting active gases, and (3) the semiconductor microclusters are separated into ultrahigh vacuum by a high-speed gas flow of an inert gas. (4) The beam is passed through the vapor of the sensitizing dye to form a heterojunction between the semiconductor microcluster and the sensitizing dye molecule to form semiconductor fine particles. . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004065304-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006182615-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009521384-A |
| priorityDate |
1996-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |