| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 |
| filingDate |
1996-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2633e5560200f77046efe752831b6cab |
| publicationDate |
1998-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10144629-A |
| titleOfInvention |
Manufacturing method of barrier metal |
| abstract |
(57) [Problem] To form a thin titanium nitride silicide film having high barrier properties as a barrier metal with good step coverage. SOLUTION: After forming a silicon oxide film 2 on a semiconductor substrate 1, a connection hole 3 is formed. A titanium film 4 on this surface Is formed, and a titanium nitride film 5 is formed thereon by a thermal CVD method. Next, the titanium nitride film 5 is placed in the silane plasma 9. To form a titanium nitride silicide film 6. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021145077-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6906420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003045960-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6683381-B2 |
| priorityDate |
1996-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |