http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10139588-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 |
| filingDate | 1996-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac06b385f2cc71ada93e6672e1b84280 |
| publicationDate | 1998-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10139588-A |
| titleOfInvention | Compound semiconductor vapor phase growth method, vapor phase growth apparatus, and compound semiconductor element manufacturing method |
| abstract | (57) Abstract: A method of irradiating active hydrogen for removing impurities on a surface is applicable to an MOCVD method. SOLUTION: In the present invention, a hydride gas (a group V or group VI hydride) of a nonmetal element constituting a compound semiconductor is supplied as an atmosphere gas, and activated hydrogen is converted into an atomic or ionic state on a wafer. Irradiate the surface to clean the surface. The total pressure at this time is desirably 3 × 10 −6 atmosphere or more and 1/300 atmosphere or less. After the active hydrogen treatment in a nonmetal (V or VI) hydride atmosphere, normal MOCVD growth is performed at a pressure of 1/100 atm (7.6 Torr) or more. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7042023-B2 |
| priorityDate | 1996-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.