| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 |
| filingDate |
1996-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b100bdb7f7498446220a8402211ca915 |
| publicationDate |
1998-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10135238-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) Abstract: To prevent metal contamination of an epitaxial layer when forming an epitaxial layer on a semiconductor substrate on which a conductive film made of a metal film is formed. SOLUTION: Bipolar transistor (semiconductor device) 1, a first conductive pattern 8 made of a high-melting metal film or a high-melting metal compound film is formed on a semiconductor substrate 4, and a second conductive pattern 9 made of a non-metal film covers the first conductive pattern 8. Are formed. Semiconductor substrate 4 The first conductive type base layer 1 is made of a semiconductor layer made of an epitaxial layer so as to be in contact with the second conductive pattern 9. 0 is formed. In the case of manufacturing the bipolar transistor 1, after covering the first conductive pattern 8 with the second conductive pattern 9, a semiconductor layer to be the base layer 10 is formed by an epitaxial technique. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007535799-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100745858-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100305672-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0137331-A1 |
| priorityDate |
1996-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |