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filingDate 1996-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1998-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10132653-A
titleOfInvention Manufacturing method of thermal infrared sensor
abstract (57) [Problem] A method of returning a metal film oxidized during a process or a metal oxide film having an increased oxidation number to the original electrical characteristics with a protective film or the like, or a change in a temperature coefficient of resistance. Provided is a method for controlling only the specific resistance of the film without performing the above operation. SOLUTION: A sample wafer 1 on which a sensor has been formed is placed on a sample holder 2 in a vacuum vessel 3, and a heat treatment is performed on the sample wafer 1 at a desired temperature in a reducing atmosphere containing hydrogen gas. For the reducing atmosphere, introduce a reducing gas consisting of a mixed gas of argon and hydrogen into a vacuum-evacuated container, or enclose a thin film in a diffusion furnace at normal pressure and flow a certain amount of reducing gas consisting of hydrogen gas. Can be used as a reducing atmosphere.
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