http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10130831-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3b275afa0850f4e61db127b41613765 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1996-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_439f5a9aa2cd22c7e3d1fa609c6cef99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0fdcc3bbc90e8c7ed51e514da61153d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25778bfda10510a3f4734308b23fe361 |
| publicationDate | 1998-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H10130831-A |
| titleOfInvention | Manufacturing method of infrared absorbing film for diaphragm type infrared sensor |
| abstract | (57) Abstract: The present invention relates to a method for manufacturing an infrared absorbing film for a diaphragm type infrared sensor, by making it possible to easily control the specific resistance of the film within a range of one digit or more. An applicable film thickness range is expanded, and a film thickness design for relieving internal stress of a diaphragm beam is facilitated. In a sputtering method for forming a titanium nitride film, only a nitrogen gas is used as a sputtering gas and a reaction gas instead of a mixed gas of argon and a reaction gas used as a conventional sputtering gas, and a sputtering pressure is used. Is set to 3 to 8 mmTorr, the chemical composition of the titanium nitride film can be made excessive in nitrogen, so that the resistance of the titanium nitride film can be increased. Further, since the composition ratio becomes excessively large, the compressive stress of the titanium nitride film can be increased. |
| priorityDate | 1996-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.