http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10116889-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B65D85-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G63-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-673 |
filingDate | 1996-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed50006de0f841ff1fec15c608348534 |
publicationDate | 1998-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H10116889-A |
titleOfInvention | Silicon wafer carrier |
abstract | (57) [Problem] To provide a silicon wafer carrier in which the generation amount of volatile gas is suppressed to such an extent that surface contamination of a silicon wafer is not substantially caused, and which has high mechanical strength and heat resistance. SOLUTION: The amount of volatile gas generated when heat-treated at 150 ° C. for 60 minutes is 10 ppm or less, and the amount of alkali metal eluted when immersed in ultrapure water at 80 ° C. for 120 minutes is 50 ppb or less. Silicon wafer carrier made of thermoplastic polyester resin. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6663924-B1 |
priorityDate | 1996-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.